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MBR120LSFT1G Технические параметры

ON Semiconductor  MBR120LSFT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 14 hours ago)
Factory Lead Time 5 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case SOD-123F
Surface Mount YES
Number of Pins 2Pins
Diode Element Material SILICON
Number of Elements 1 Element
Packaging Cut Tape (CT)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Max Operating Temperature 125°C
Min Operating Temperature -55°C
Additional Feature FREE WHEELING DIODE
HTS Code 8541.10.00.80
Voltage - Rated DC 20V
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating 1A
Time@Peak Reflow Temperature-Max (s) 40
Свойство продукта Значение свойства
Base Part Number MBR120
Pin Count 2
Polarity Standard
Element Configuration Single
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 400μA @ 20V
Output Current 1A
Voltage - Forward (Vf) (Max) @ If 450mV @ 1A
Forward Current 1A
Max Reverse Leakage Current 400μA
Operating Temperature - Junction -55°C~125°C
Max Surge Current 50A
Halogen Free Halogen Free
Forward Voltage 450mV
Max Reverse Voltage (DC) 20V
Average Rectified Current 1A
Peak Reverse Current 400μA
Max Repetitive Reverse Voltage (Vrrm) 20V
Peak Non-Repetitive Surge Current 50A
Max Forward Surge Current (Ifsm) 50A
Height 880μm
Length 2.9mm
Width 1.8mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

MBR120LSFT1G Документы

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