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MBR1H100SFT3G Технические параметры

ON Semiconductor  MBR1H100SFT3G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 6 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case SOD-123F
Surface Mount YES
Number of Pins 2Pins
Diode Element Material SILICON
Number of Elements 1 Element
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Max Operating Temperature 175°C
Min Operating Temperature -65°C
Additional Feature FREE WHEELING DIODE
HTS Code 8541.10.00.80
Terminal Position DUAL
Terminal Form FLAT
Свойство продукта Значение свойства
Base Part Number MBR1H100
Pin Count 2
Element Configuration Single
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 40μA @ 100V
Voltage - Forward (Vf) (Max) @ If 760mV @ 1A
Forward Current 1A
Operating Temperature - Junction -65°C~175°C
Output Current-Max 1A
Halogen Free Halogen Free
Forward Voltage 840mV
Max Reverse Voltage (DC) 100V
Average Rectified Current 1A
Peak Reverse Current 40μA
Max Repetitive Reverse Voltage (Vrrm) 100V
Peak Non-Repetitive Surge Current 50A
Max Forward Surge Current (Ifsm) 50A
Height 900μm
Length 2.9mm
Width 1.8mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

MBR1H100SFT3G Документы

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