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MBR20100CTTU Технические параметры

ON Semiconductor  MBR20100CTTU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Arrays
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Weight 1.8g
Diode Element Material SILICON
Number of Elements 2 Elements
Packaging Tube
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Applications EFFICIENCY
Additional Feature LOW POWER LOSS
HTS Code 8541.10.00.80
Свойство продукта Значение свойства
Terminal Position SINGLE
Base Part Number MBR20100CT
Element Configuration Common Cathode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 200μA @ 100V
Voltage - Forward (Vf) (Max) @ If 800mV @ 10A
Forward Current 10A
Operating Temperature - Junction 150°C Max
Forward Voltage 900mV
Max Reverse Voltage (DC) 100V
Average Rectified Current 10A
Number of Phases 1Phase
Peak Reverse Current 200μA
Max Repetitive Reverse Voltage (Vrrm) 100V
JEDEC-95 Code TO-220AB
Peak Non-Repetitive Surge Current 150A
Diode Configuration 1 Pair Common Cathode
Max Forward Surge Current (Ifsm) 150A
Height 16.51mm
Length 10.67mm
Width 4.83mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

MBR20100CTTU Документы

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