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MBR20200CTG Технические параметры

ON Semiconductor  MBR20200CTG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Arrays
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 15 Weeks
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Supplier Device Package TO-220AB
Weight 4.535924g
Breakdown Voltage / V 200V
Packaging Tube
Series SWITCHMODE™
Published 2005
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -65°C
Capacitance 500pF
Voltage - Rated DC 200V
Current Rating 20A
Base Part Number MBR20200CT
Element Configuration Common Cathode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Свойство продукта Значение свойства
Current - Reverse Leakage @ Vr 1mA @ 200V
Voltage - Forward (Vf) (Max) @ If 900mV @ 10A
Forward Current 20A
Max Reverse Leakage Current 1mA
Operating Temperature - Junction -65°C~175°C
Max Surge Current 150A
Voltage - DC Reverse (Vr) (Max) 200V
Current - Average Rectified (Io) 10A
Forward Voltage 1V
Max Reverse Voltage (DC) 200V
Average Rectified Current 10A
Reverse Recovery Time 40 ns
Peak Reverse Current 1mA
Max Repetitive Reverse Voltage (Vrrm) 200V
Peak Non-Repetitive Surge Current 150A
Diode Configuration 1 Pair Common Cathode
Max Forward Surge Current (Ifsm) 150A
Height 9.28mm
Length 10.28mm
Width 4.82mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

MBR20200CTG Документы

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