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MBR20200CTTU Технические параметры

ON Semiconductor  MBR20200CTTU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Arrays
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Weight 1.8g
Diode Element Material SILICON
Number of Elements 2 Elements
Packaging Tube
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Applications EFFICIENCY
Additional Feature LOW POWER LOSS
HTS Code 8541.10.00.80
Terminal Position SINGLE
Base Part Number MBR20200CT
Свойство продукта Значение свойства
Element Configuration Common Cathode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 200μA @ 200V
Voltage - Forward (Vf) (Max) @ If 800mV @ 10A
Forward Current 20A
Max Reverse Leakage Current 200μA
Operating Temperature - Junction 150°C Max
Max Surge Current 150A
Forward Voltage 1V
Max Reverse Voltage (DC) 200V
Average Rectified Current 10A
Number of Phases 1Phase
Peak Reverse Current 200μA
Max Repetitive Reverse Voltage (Vrrm) 200V
JEDEC-95 Code TO-220AB
Peak Non-Repetitive Surge Current 150A
Diode Configuration 1 Pair Common Cathode
Max Forward Surge Current (Ifsm) 150A
Height 16.51mm
Length 10.67mm
Width 4.83mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

MBR20200CTTU Документы

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