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MBR2535CTG Технические параметры

ON Semiconductor  MBR2535CTG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Arrays
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 8 Weeks
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Supplier Device Package TO-220AB
Weight 4.535924g
Packaging Tube
Series SWITCHMODE™
Published 2006
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -65°C
Capacitance 500pF
Voltage - Rated DC 35V
Current Rating 25A
Base Part Number MBR2535CT
Element Configuration Common Cathode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Свойство продукта Значение свойства
Current - Reverse Leakage @ Vr 200μA @ 35V
Voltage - Forward (Vf) (Max) @ If 820mV @ 30A
Forward Current 30A
Max Reverse Leakage Current 200μA
Operating Temperature - Junction -65°C~175°C
Max Surge Current 150A
Voltage - DC Reverse (Vr) (Max) 35V
Current - Average Rectified (Io) 30A
Forward Voltage 820mV
Max Reverse Voltage (DC) 35V
Average Rectified Current 30A
Peak Reverse Current 200μA
Max Repetitive Reverse Voltage (Vrrm) 35V
Peak Non-Repetitive Surge Current 150A
Diode Configuration 1 Pair Common Cathode
Max Forward Surge Current (Ifsm) 150A
Height 15.748mm
Length 10.2616mm
Width 4.826mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

MBR2535CTG Документы

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