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MBR2535CTH Технические параметры

ON Semiconductor  MBR2535CTH technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Arrays
Марка ON Semiconductor
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Diode Element Material SILICON
Number of Elements 2 Elements
Operating Temperature (Max.) 150°C
Series SWITCHMODE™
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) Vendor Undefined
Number of Terminations 3Terminations
Terminal Finish Tin/Lead (Sn/Pb)
Applications GENERAL PURPOSE
Additional Feature HIGH RELIABILITY
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard MIL-19500
JESD-30 Code R-PSFM-T3
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 200μA @ 35V
Voltage - Forward (Vf) (Max) @ If 620mV @ 15A
Operating Temperature - Junction -65°C~175°C
Output Current-Max 15A
Voltage - DC Reverse (Vr) (Max) 35V
Current - Average Rectified (Io) 15A
Number of Phases 1Phase
Rep Pk Reverse Voltage-Max 35V
JEDEC-95 Code TO-220AB
Non-rep Pk Forward Current-Max 150A
Diode Configuration 1 Pair Common Cathode
Reverse Current-Max 200μA
RoHS Status Non-RoHS Compliant

MBR2535CTH Документы

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