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MBR2535CTLG Технические параметры

ON Semiconductor  MBR2535CTLG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Arrays
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 9 Weeks
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3Pins
Diode Element Material SILICON
Breakdown Voltage / V 35V
Number of Elements 2 Elements
Packaging Tube
Series SWITCHMODE™
Published 1997
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Applications EFFICIENCY
Additional Feature LOW POWER LOSS
HTS Code 8541.10.00.80
Capacitance 500pF
Voltage - Rated DC 35V
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Current Rating 12.5A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Element Configuration Common Cathode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 5mA @ 35V
Voltage - Forward (Vf) (Max) @ If 470mV @ 12.5A
Forward Current 25A
Max Reverse Leakage Current 5mA
Operating Temperature - Junction -65°C~150°C
Max Surge Current 150A
Forward Voltage 550mV
Max Reverse Voltage (DC) 35V
Average Rectified Current 12.5A
Number of Phases 1Phase
Peak Reverse Current 5mA
Max Repetitive Reverse Voltage (Vrrm) 35V
JEDEC-95 Code TO-220AB
Peak Non-Repetitive Surge Current 150A
Diode Configuration 1 Pair Common Cathode
Max Forward Surge Current (Ifsm) 150A
Height 9.28mm
Length 10.28mm
Width 4.82mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

MBR2535CTLG Документы

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