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MBR2H200SFT1G Технические параметры

ON Semiconductor  MBR2H200SFT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 6 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOD-123F
Number of Pins 2Pins
Weight 10.290877mg
Packaging Tape & Reel (TR)
Published 2014
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Element Configuration Single
Speed Fast Recovery =< 500ns, > 200mA (Io)
Свойство продукта Значение свойства
Diode Type Schottky
Current - Reverse Leakage @ Vr 200μA @ 200V
Voltage - Forward (Vf) (Max) @ If 940mV @ 2A
Forward Current 2A
Operating Temperature - Junction -55°C~150°C
Forward Voltage 940mV
Max Reverse Voltage (DC) 200V
Average Rectified Current 2A
Peak Reverse Current 200μA
Max Repetitive Reverse Voltage (Vrrm) 200V
Reverse Voltage 200V
Max Forward Surge Current (Ifsm) 30A
Max Junction Temperature (Tj) 150°C
Height 980μm
Length 2.9mm
Width 1.8mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

MBR2H200SFT1G Документы

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