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MBR30L45CTG Технические параметры

ON Semiconductor  MBR30L45CTG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Arrays
Марка ON Semiconductor
Lifecycle Status LAST SHIPMENTS (Last Updated: 3 days ago)
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3Pins
Diode Element Material SILICON
Number of Elements 2 Elements
Packaging Tube
Series SWITCHMODE™
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Applications EFFICIENCY
Additional Feature LOW POWER LOSS
HTS Code 8541.10.00.80
Свойство продукта Значение свойства
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Element Configuration Common Cathode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 650μA @ 45V
Voltage - Forward (Vf) (Max) @ If 500mV @ 15A
Max Reverse Leakage Current 650μA
Operating Temperature - Junction -55°C~150°C
Max Surge Current 190A
Forward Voltage 610mV
Max Reverse Voltage (DC) 45V
Average Rectified Current 15A
Number of Phases 1Phase
JEDEC-95 Code TO-220AB
Peak Non-Repetitive Surge Current 190A
Diode Configuration 1 Pair Common Cathode
Max Forward Surge Current (Ifsm) 190A
RoHS Status RoHS Compliant
Lead Free Lead Free

MBR30L45CTG Документы

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