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MBRA2H100T3G Технические параметры

ON Semiconductor  MBRA2H100T3G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 5 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case DO-214AC, SMA
Surface Mount YES
Number of Pins 2Pins
Diode Element Material SILICON
Manufacturer Package Identifier CASE 403D−02
Number of Elements 1 Element
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Max Operating Temperature 175°C
Min Operating Temperature -65°C
Applications POWER
Additional Feature FREE WHEELING DIODE
HTS Code 8541.10.00.80
Свойство продукта Значение свойства
Terminal Position DUAL
Terminal Form C BEND
Base Part Number MBRA2H100
Pin Count 2
Element Configuration Single
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 8μA @ 100V
Voltage - Forward (Vf) (Max) @ If 790mV @ 2A
Forward Current 2A
Operating Temperature - Junction -65°C~175°C
Output Current-Max 2A
Halogen Free Halogen Free
Forward Voltage 790mV
Max Reverse Voltage (DC) 100V
Average Rectified Current 2A
Number of Phases 1Phase
Peak Reverse Current 8μA
Max Repetitive Reverse Voltage (Vrrm) 100V
Peak Non-Repetitive Surge Current 130A
Max Forward Surge Current (Ifsm) 130A
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

MBRA2H100T3G Документы

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