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MBRAF1100T3G Технические параметры

ON Semiconductor  MBRAF1100T3G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка ON Semiconductor
Surface Mount YES
Diode Element Material SILICON
Number of Terminals 2Terminals
ECCN (US) EAR99
Maximum DC Reverse Voltage (V) 100
Peak Reverse Repetitive Voltage (V) 100
Maximum Continuous Forward Current (A) 1
Peak Non-Repetitive Surge Current (A) 50
Peak Forward Voltage (V) 0.75
Peak Reverse Current (uA) 500
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 150
Supplier Package SMA-FL
Military No
Mounting Surface Mount
Package Height 1.1(Max)
Package Length 4.6(Max)
Package Width 2.8(Max)
PCB changed 2
Package Description LEAD FREE, PLASTIC, CASE 403AA-01, SMA-FL, 2 PIN
Package Style SMALL OUTLINE
Moisture Sensitivity Levels 1
Package Body Material PLASTIC/EPOXY
Manufacturer Package Code 403AA
Operating Temperature-Min -65 °C
Operating Temperature-Max 150 °C
Manufacturer Part Number MBRAF1100T3G
Свойство продукта Значение свойства
Package Shape RECTANGULAR
Manufacturer ON Semiconductor
Number of Elements 1 Element
Part Life Cycle Code Active
Ihs Manufacturer ON SEMICONDUCTOR
Forward Voltage-Max (VF) 0.75 V
Risk Rank 5.7
Packaging Tape and Reel
JESD-609 Code e3
Pbfree Code Yes
Part Status Active
ECCN Code EAR99
Type Schottky Diode
Terminal Finish Tin (Sn)
Additional Feature FREE WHEELING DIODE
HTS Code 8541.10.00.80
Subcategory Rectifier Diodes
Technology SCHOTTKY
Terminal Position DUAL
Terminal Form FLAT
Reach Compliance Code not_compliant
Pin Count 2
JESD-30 Code R-PDSO-F2
Configuration Single
Diode Type RECTIFIER DIODE
Output Current-Max 1 A
Rep Pk Reverse Voltage-Max 100 V
Non-rep Pk Forward Current-Max 50 A
RoHS Status Yes with exemptions

MBRAF1100T3G Документы

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