Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок - Все продукты
- /
- Discrete Semiconductor Products
- /
- Diodes - Rectifiers - Arrays
- /
- MBRB41H100CT-1G
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
MBRB41H100CT-1G Технические параметры
ON Semiconductor MBRB41H100CT-1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - Rectifiers - Arrays | |
| Марка | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) | |
| Factory Lead Time | 2 Weeks | |
| Mounting Type | Through Hole | |
| Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA | |
| Surface Mount | NO | |
| Number of Pins | 3Pins | |
| Diode Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Packaging | Tube | |
| Series | SWITCHMODE™ | |
| Published | 2007 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Max Operating Temperature | 175°C | |
| Min Operating Temperature | -65°C | |
| Applications | EFFICIENCY | |
| Additional Feature | LOW POWER LOSS | |
| HTS Code | 8541.10.00.80 | |
| Terminal Position | SINGLE | |
| Peak Reflow Temperature (Cel) | 260 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Base Part Number | MBRB41H100CT | |
| Pin Count | 3 | |
| Element Configuration | Common Cathode | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Diode Type | Schottky | |
| Current - Reverse Leakage @ Vr | 10μA @ 100V | |
| Voltage - Forward (Vf) (Max) @ If | 800mV @ 20A | |
| Forward Current | 20A | |
| Max Reverse Leakage Current | 10μA | |
| Operating Temperature - Junction | 175°C Max | |
| Max Surge Current | 350A | |
| Forward Voltage | 900mV | |
| Max Reverse Voltage (DC) | 100V | |
| Average Rectified Current | 20A | |
| Number of Phases | 1Phase | |
| Peak Reverse Current | 10μA | |
| Max Repetitive Reverse Voltage (Vrrm) | 100V | |
| Peak Non-Repetitive Surge Current | 350A | |
| Diode Configuration | 1 Pair Common Cathode | |
| Max Forward Surge Current (Ifsm) | 350A | |
| Height | 9.65mm | |
| Length | 10.31mm | |
| Width | 4.7mm | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ