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MBRD640CTG Технические параметры

ON Semiconductor  MBRD640CTG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Arrays
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 2 Weeks
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3Pins
Supplier Device Package DPAK
Breakdown Voltage / V 40V
Packaging Tube
Series SWITCHMODE™
Published 2012
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -65°C
Voltage - Rated DC 40V
Current Rating 6A
Base Part Number MBRD640CT
Element Configuration Common Cathode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Свойство продукта Значение свойства
Diode Type Schottky
Current - Reverse Leakage @ Vr 100μA @ 40V
Voltage - Forward (Vf) (Max) @ If 700mV @ 3A
Forward Current 6A
Max Reverse Leakage Current 100μA
Operating Temperature - Junction -65°C~175°C
Max Surge Current 75A
Voltage - DC Reverse (Vr) (Max) 40V
Current - Average Rectified (Io) 3A
Forward Voltage 900mV
Max Reverse Voltage (DC) 40V
Average Rectified Current 3A
Peak Reverse Current 100μA
Max Repetitive Reverse Voltage (Vrrm) 40V
Peak Non-Repetitive Surge Current 75A
Diode Configuration 1 Pair Common Cathode
Max Forward Surge Current (Ifsm) 75A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

MBRD640CTG Документы

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