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MBRD660CTG Технические параметры

ON Semiconductor  MBRD660CTG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Arrays
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Factory Lead Time 8 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3Pins
Supplier Device Package DPAK
Breakdown Voltage / V 60V
Packaging Tube
Series SWITCHMODE™
Published 2006
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -65°C
Voltage - Rated DC 60V
Current Rating 6A
Base Part Number MBRD660CT
Element Configuration Common Cathode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Свойство продукта Значение свойства
Current - Reverse Leakage @ Vr 100μA @ 60V
Voltage - Forward (Vf) (Max) @ If 700mV @ 3A
Forward Current 6A
Operating Temperature - Junction -65°C~175°C
Halogen Free Halogen Free
Voltage - DC Reverse (Vr) (Max) 60V
Current - Average Rectified (Io) 3A
Forward Voltage 900mV
Max Reverse Voltage (DC) 60V
Average Rectified Current 3A
Peak Reverse Current 100μA
Max Repetitive Reverse Voltage (Vrrm) 60V
Peak Non-Repetitive Surge Current 75A
Diode Configuration 1 Pair Common Cathode
Max Forward Surge Current (Ifsm) 75A
Height 2.38mm
Length 6.73mm
Width 6.22mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Просмотр сходства
MBRD660CTG brand manufacturers: ON Semiconductor, Anli stock, MBRD660CTG reference price.ON Semiconductor. MBRD660CTG parameters, MBRD660CTG Datasheet PDF and pin diagram description download.You can use the MBRD660CTG Diodes - Rectifiers - Arrays, DSP Datesheet PDF, find MBRD660CTG pin diagram and circuit diagram and usage method of function,MBRD660CTG electronics tutorials.You can download from the Anli.