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MBRD835LG Технические параметры

ON Semiconductor  MBRD835LG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 8 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3Pins
Diode Element Material SILICON
Breakdown Voltage / V 35V
Number of Elements 1 Element
Packaging Tube
Series SWITCHMODE™
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Applications POWER
Additional Feature FREE WHEELING DIODE
HTS Code 8541.10.00.80
Voltage - Rated DC 35V
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 8A
Time@Peak Reflow Temperature-Max (s) 40
Свойство продукта Значение свойства
Base Part Number MBRD835
Pin Count 3
JESD-30 Code R-PSSO-G2
Polarity Standard
Element Configuration Single
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 1.4mA @ 35V
Output Current 8A
Voltage - Forward (Vf) (Max) @ If 510mV @ 8A
Case Connection CATHODE
Forward Current 8A
Max Reverse Leakage Current 1.4mA
Operating Temperature - Junction -65°C~150°C
Max Surge Current 75A
Halogen Free Halogen Free
Forward Voltage 510mV
Max Reverse Voltage (DC) 35V
Average Rectified Current 8A
Number of Phases 1Phase
Peak Reverse Current 1.4mA
Max Repetitive Reverse Voltage (Vrrm) 35V
Peak Non-Repetitive Surge Current 75A
Max Forward Surge Current (Ifsm) 75A
Height 2.38mm
Length 6.73mm
Width 6.22mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

MBRD835LG Документы

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