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MBRM110ET1G Технические параметры

ON Semiconductor  MBRM110ET1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 22 hours ago)
Factory Lead Time 4 Weeks
Contact Plating Tin
Surface Mount YES
Package / Case DO-216AA
Mounting Type Surface Mount
Number of Pins 2Pins
Diode Element Material SILICON
Number of Elements 1 Element
Published 2005
Packaging Cut Tape (CT)
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 1Termination
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
HTS Code 8541.10.00.80
Voltage - Rated DC 10V
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 1A
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MBRM110
Pin Count 2
Свойство продукта Значение свойства
JESD-30 Code R-PSSO-G1
Polarity Standard
Element Configuration Single
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 1μA @ 10V
Output Current 1A
Voltage - Forward (Vf) (Max) @ If 530mV @ 1A
Case Connection CATHODE
Forward Current 1A
Max Reverse Leakage Current 1μA
Operating Temperature - Junction -55°C~150°C
Max Surge Current 50A
Halogen Free Halogen Free
Forward Voltage 530mV
Max Reverse Voltage (DC) 10V
Average Rectified Current 1A
Peak Reverse Current 1μA
Max Repetitive Reverse Voltage (Vrrm) 10V
Peak Non-Repetitive Surge Current 50A
Max Forward Surge Current (Ifsm) 50A
Height 2.18mm
Length 2.05mm
Width 1.15mm
RoHS Status ROHS3 Compliant
Radiation Hardening No
REACH SVHC No SVHC
Lead Free Lead Free

MBRM110ET1G Документы

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