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MBRS1100T3G Технические параметры

ON Semiconductor  MBRS1100T3G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 9 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case DO-214AA, SMB
Surface Mount YES
Number of Pins 2Pins
Diode Element Material SILICON
Manufacturer Package Identifier CASE 403A−03 ISSUE J
Number of Elements 1 Element
Packaging Cut Tape (CT)
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Max Operating Temperature 175°C
Min Operating Temperature -65°C
Applications POWER
Additional Feature FREE WHEELING DIODE
HTS Code 8541.10.00.80
Voltage - Rated DC 100V
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Current Rating 1A
Time@Peak Reflow Temperature-Max (s) 40
Свойство продукта Значение свойства
Base Part Number MBRS1100
Pin Count 2
Polarity Standard
Element Configuration Single
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 500μA @ 100V
Output Current 1A
Voltage - Forward (Vf) (Max) @ If 750mV @ 1A
Forward Current 1A
Max Reverse Leakage Current 500μA
Operating Temperature - Junction -65°C~175°C
Max Surge Current 50A
Halogen Free Halogen Free
Forward Voltage 750mV
Max Reverse Voltage (DC) 100V
Average Rectified Current 1A
Number of Phases 1Phase
Peak Reverse Current 500μA
Max Repetitive Reverse Voltage (Vrrm) 100V
Peak Non-Repetitive Surge Current 50A
Reverse Voltage 100V
Max Forward Surge Current (Ifsm) 50A
Max Junction Temperature (Tj) 175°C
Height 2.47mm
Length 4.32mm
Width 3.56mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

MBRS1100T3G Документы

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