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MBT3906DW1T2G Технические параметры
ON Semiconductor MBT3906DW1T2G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Arrays | |
| Марка | ON Semiconductor | |
| Lifecycle Status | LIFETIME (Last Updated: 5 days ago) | |
| Factory Lead Time | 10 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | |
| Surface Mount | YES | |
| Number of Pins | 6Pins | |
| Collector-Emitter Breakdown Voltage | 40V | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2011 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Finish | Tin (Sn) | |
| Max Power Dissipation | 150mW | |
| Pin Count | 6 | |
| Polarity | PNP | |
| Power - Max | 150mW | |
| Halogen Free | Halogen Free | |
| Transistor Type | 2 PNP (Dual) | |
| Collector Emitter Voltage (VCEO) | 400mV | |
| Max Collector Current | 200mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA 1V | |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA | |
| Transition Frequency | 250MHz | |
| Frequency - Transition | 250MHz | |
| Collector Base Voltage (VCBO) | 40V | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
Индекс :
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