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MCH6660-TL-H Технические параметры

ON Semiconductor  MCH6660-TL-H technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка ON Semiconductor
Factory Lead Time 6 Weeks
Mounting Type Surface Mount
Package / Case 6-SMD, Flat Leads
Surface Mount YES
Number of Pins 6Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 2A 1.5A
Number of Elements 2 Elements
Turn Off Delay Time 14.5 ns
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e6
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Tin/Bismuth (Sn/Bi)
Max Power Dissipation 800mW
Pin Count 6
Element Configuration Dual
Свойство продукта Значение свойства
Operating Mode ENHANCEMENT MODE
Power Dissipation 800mW
Turn On Delay Time 5.1 ns
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 136m Ω @ 1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 128pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 1.8nC @ 4.5V
Rise Time 11ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 12 ns
Continuous Drain Current (ID) 1.5A
Gate to Source Voltage (Vgs) 10V
Drain Current-Max (Abs) (ID) 2A
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 850μm
Length 2mm
Width 1.6mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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MCH6660-TL-H Документы

MCH6660-TL-H brand manufacturers: ON Semiconductor, Anli stock, MCH6660-TL-H reference price.ON Semiconductor. MCH6660-TL-H parameters, MCH6660-TL-H Datasheet PDF and pin diagram description download.You can use the MCH6660-TL-H Transistors - FETs, MOSFETs - Arrays, DSP Datesheet PDF, find MCH6660-TL-H pin diagram and circuit diagram and usage method of function,MCH6660-TL-H electronics tutorials.You can download from the Anli.