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ON Semiconductor MCH6663-TL-W technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) | |
| Factory Lead Time | 7 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-SMD, Flat Leads | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 1.8A 1.5A | |
| Number of Elements | 2 Elements | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2012 | |
| JESD-609 Code | e6 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| Terminal Finish | Tin/Bismuth (Sn/Bi) | |
| Max Power Dissipation | 800mW |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Position | DUAL | |
| JESD-30 Code | R-PDSO-F6 | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| FET Type | N and P-Channel | |
| Rds On (Max) @ Id, Vgs | 188m Ω @ 900mA, 10V | |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 88pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 2nC @ 10V | |
| Drain to Source Voltage (Vdss) | 30V | |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
| Continuous Drain Current (ID) | 1.5A | |
| Drain Current-Max (Abs) (ID) | 1.8A | |
| Drain-source On Resistance-Max | 0.188Ohm | |
| DS Breakdown Voltage-Min | 30V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Logic Level Gate, 4V Drive | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |