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MJD122TF Технические параметры

ON Semiconductor  MJD122TF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status LAST SHIPMENTS (Last Updated: 5 days ago)
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3Pins
Weight 260.37mg
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 100V
Number of Elements 1 Element
hFEMin 1000
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 100V
Свойство продукта Значение свойства
Max Power Dissipation 1.75W
Terminal Form GULL WING
Current Rating 8A
Base Part Number MJD122
JESD-30 Code R-PSSO-G2
Polarity NPN
Element Configuration Single
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 4A 4V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 4V @ 80mA, 8A
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
Height 2.3mm
Length 6.6mm
Width 6.1mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Просмотр сходства
MJD122TF brand manufacturers: ON Semiconductor, Anli stock, MJD122TF reference price.ON Semiconductor. MJD122TF parameters, MJD122TF Datasheet PDF and pin diagram description download.You can use the MJD122TF Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find MJD122TF pin diagram and circuit diagram and usage method of function,MJD122TF electronics tutorials.You can download from the Anli.