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MJD31CT4G Технические параметры

ON Semiconductor  MJD31CT4G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Factory Lead Time 8 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 100V
Collector-Emitter Saturation Voltage 1.2V
Number of Elements 1 Element
hFEMin 25
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Voltage - Rated DC 100V
Max Power Dissipation 1.56W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 3A
Свойство продукта Значение свойства
Frequency 3MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MJD31
Pin Count 3
JESD-30 Code R-PSSO-G2
Element Configuration Single
Power Dissipation 1.56W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Gain Bandwidth Product 3MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 3A 4V
Current - Collector Cutoff (Max) 50μA
Vce Saturation (Max) @ Ib, Ic 1.2V @ 375mA, 3A
Transition Frequency 3MHz
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
Height 2.38mm
Length 6.73mm
Width 6.22mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

MJD31CT4G Документы

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