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MJD45H11T4 Технические параметры

ON Semiconductor  MJD45H11T4 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Discrete Semiconductor Products
Марка ON Semiconductor
Factory Lead Time 8 Weeks
Surface Mount YES
Number of Terminals 2Terminals
Transistor Element Material SILICON
Package Style SMALL OUTLINE
Moisture Sensitivity Levels 1
Package Body Material PLASTIC/EPOXY
Reflow Temperature-Max (s) 30
Operating Temperature-Max 150 °C
Rohs Code Yes
Transition Frequency-Nom (fT) 40 MHz
Manufacturer Part Number MJD45H11T4
Package Shape RECTANGULAR
Manufacturer STMicroelectronics
Number of Elements 1 Element
Part Life Cycle Code Active
Samacsys Description MJD45H11T4, PNP Bipolar Transistor, 8 A 80 V HFE:40 Power, 3-Pin D-PAK
Ihs Manufacturer STMICROELECTRONICS
Risk Rank 0.65
Свойство продукта Значение свойства
JESD-609 Code e3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Subcategory Other Transistors
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Configuration SINGLE
Transistor Application SWITCHING
Polarity/Channel Type PNP
JEDEC-95 Code TO-252
Power Dissipation-Max (Abs) 20 W
Collector Current-Max (IC) 8 A
DC Current Gain-Min (hFE) 40
Collector-Emitter Voltage-Max 80 V
VCEsat-Max 1 V
Power Dissipation Ambient-Max 20 W
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MJD45H11T4 Документы

  • Datasheets
MJD45H11T4 brand manufacturers: ON Semiconductor, Anli stock, MJD45H11T4 reference price.ON Semiconductor. MJD45H11T4 parameters, MJD45H11T4 Datasheet PDF and pin diagram description download.You can use the MJD45H11T4 Discrete Semiconductor Products, DSP Datesheet PDF, find MJD45H11T4 pin diagram and circuit diagram and usage method of function,MJD45H11T4 electronics tutorials.You can download from the Anli.