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MJE15033G Технические параметры

ON Semiconductor  MJE15033G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 7 Weeks
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3Pins
Weight 4.535924g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 250V
Collector-Emitter Saturation Voltage 500mV
Number of Elements 1 Element
hFEMin 10
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2003
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Voltage - Rated DC -250V
Max Power Dissipation 50W
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Current Rating -8A
Frequency 30MHz
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Element Configuration Single
Power Dissipation 2W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Gain Bandwidth Product 30MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 250V
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 2A 5V
Current - Collector Cutoff (Max) 10μA ICBO
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A
Transition Frequency 30MHz
Collector Base Voltage (VCBO) 250V
Emitter Base Voltage (VEBO) 5V
Height 15.748mm
Length 10.2616mm
Width 4.826mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

MJE15033G Документы

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