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MJE171STU Технические параметры

ON Semiconductor  MJE171STU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Collector-Emitter Breakdown Voltage 60V
Number of Elements 1 Element
hFEMin 50
Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC -60V
Max Power Dissipation 1.5W
Current Rating -3A
Свойство продукта Значение свойства
Frequency 50MHz
Base Part Number MJE171
Element Configuration Single
Power Dissipation 1.5W
Gain Bandwidth Product 50MHz
Transistor Type PNP
Collector Emitter Voltage (VCEO) 1.7V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.7V @ 600mA, 3A
Collector Base Voltage (VCBO) -80V
Emitter Base Voltage (VEBO) -7V
RoHS Status RoHS Compliant
Lead Free Lead Free
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MJE171STU Документы

MJE171STU brand manufacturers: ON Semiconductor, Anli stock, MJE171STU reference price.ON Semiconductor. MJE171STU parameters, MJE171STU Datasheet PDF and pin diagram description download.You can use the MJE171STU Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find MJE171STU pin diagram and circuit diagram and usage method of function,MJE171STU electronics tutorials.You can download from the Anli.