Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
ON Semiconductor MJE350STU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ON Semiconductor | |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 week ago) | |
| Factory Lead Time | 7 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-225AA, TO-126-3 | |
| Number of Pins | 3Pins | |
| Weight | 761mg | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 300V | |
| Number of Elements | 1 Element | |
| hFEMin | 30 | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tube | |
| Published | 2001 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Finish | Tin (Sn) | |
| Voltage - Rated DC | -300V | |
| Max Power Dissipation | 20W | |
| Current Rating | -500mA | |
| Base Part Number | MJE350 | |
| Polarity | PNP, NPN | |
| Element Configuration | Single | |
| Power Dissipation | 20W | |
| Transistor Type | PNP | |
| Collector Emitter Voltage (VCEO) | 300V | |
| Max Collector Current | 500mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 50mA 10V | |
| Current - Collector Cutoff (Max) | 100μA ICBO | |
| Collector Base Voltage (VCBO) | -300V | |
| Emitter Base Voltage (VEBO) | -5V | |
| Height | 11mm | |
| Length | 8mm | |
| Width | 3.25mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |