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MJW21195G Технические параметры

ON Semiconductor  MJW21195G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 6 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Number of Pins 3Pins
Weight 4.535924g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 250V
Collector-Emitter Saturation Voltage 1V
Number of Elements 1 Element
hFEMin 20
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC -250V
Max Power Dissipation 200W
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Current Rating -16A
Frequency 4MHz
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Polarity PNP, NPN
Element Configuration Single
Power Dissipation 200W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Gain Bandwidth Product 4MHz
Transistor Type PNP
Collector Emitter Voltage (VCEO) 250V
Max Collector Current 16A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 8A 5V
Current - Collector Cutoff (Max) 100μA
JEDEC-95 Code TO-247AD
Vce Saturation (Max) @ Ib, Ic 3V @ 3.2A, 16A
Transition Frequency 4MHz
Collector Base Voltage (VCBO) 400V
Emitter Base Voltage (VEBO) 5V
Height 21.08mm
Length 16.26mm
Width 5.3mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

MJW21195G Документы

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