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MLD1N06CLT4G Технические параметры
ON Semiconductor MLD1N06CLT4G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Special Purpose | |
| Марка | ON Semiconductor | |
| Lifecycle Status | OBSOLETE (Last Updated: 14 hours ago) | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Surface Mount | YES | |
| Number of Pins | 3Pins | |
| Number of Elements | 1 Element | |
| Turn Off Delay Time | 4 ns | |
| Packaging | Tape & Reel (TR) | |
| Series | SMARTDISCRETES™ | |
| Published | 2006 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| Resistance | 750MOhm | |
| Terminal Finish | Tin (Sn) | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| Applications | General Purpose | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Voltage - Rated DC | 62V | |
| Max Power Dissipation | 40W | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Current Rating | 1A | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Base Part Number | MLD1N06C | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSSO-G2 | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 40W | |
| Turn On Delay Time | 1.2 ns | |
| Transistor Application | SWITCHING | |
| Halogen Free | Halogen Free | |
| Rise Time | 4ns | |
| Drain to Source Voltage (Vdss) | 62V | |
| Fall Time (Typ) | 3 ns | |
| Transistor Type | NPN, N-Channel Gate-Drain, Source Clamp | |
| Continuous Drain Current (ID) | 1A | |
| Threshold Voltage | 1.5V | |
| Gate to Source Voltage (Vgs) | 10V | |
| Drain Current-Max (Abs) (ID) | 1A | |
| Drain to Source Breakdown Voltage | 59V | |
| Avalanche Energy Rating (Eas) | 80 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Drain to Source Resistance | 750mOhm | |
| Nominal Vgs | 1.5 V | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
Индекс :
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