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- MLD2N06CLT4G
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MLD2N06CLT4G Технические параметры
ON Semiconductor MLD2N06CLT4G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | PMIC - Power Distribution Switches, Load Drivers | |
| Марка | ON Semiconductor | |
| Lifecycle Status | OBSOLETE (Last Updated: 2 weeks ago) | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Turn Off Delay Time | 5 ns | |
| Operating Temperature | -50°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | SMARTDISCRETES™ | |
| Published | 2006 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| Resistance | 400MOhm | |
| Terminal Finish | Tin (Sn) | |
| Additional Feature | LOGIC LEVEL COMPATIBLE, OVERVOLTAGE CLAMPED PROTECTION | |
| Voltage - Rated DC | 62V | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Current Rating | 2A | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Base Part Number | MLD2N06 | |
| Pin Count | 3 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| JESD-30 Code | R-PSSO-G2 | |
| Number of Outputs | 1Output | |
| Qualification Status | Not Qualified | |
| Output Type | N-Channel | |
| Interface | On/Off | |
| Element Configuration | Single | |
| Output Configuration | Low Side | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 40W | |
| Voltage - Supply (Vcc/Vdd) | Not Required | |
| Case Connection | DRAIN | |
| Input Type | Non-Inverting | |
| Switch Type | General Purpose | |
| Transistor Application | SWITCHING | |
| Rise Time | 3ns | |
| Drain to Source Voltage (Vdss) | 62V | |
| Fall Time (Typ) | 3 ns | |
| Continuous Drain Current (ID) | 2A | |
| Ratio - Input:Output | 1:1 | |
| Gate to Source Voltage (Vgs) | 10V | |
| Voltage - Load | 58V Max | |
| Drain Current-Max (Abs) (ID) | 2A | |
| Drain to Source Breakdown Voltage | 58V | |
| Avalanche Energy Rating (Eas) | 80 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Rds On (Typ) | 300m Ω | |
| Drain to Source Resistance | 400mOhm | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
MLD2N06CLT4G Документы
- ReachStatementON-Semiconductor-company-79.pdf
- DatasheetsMLD2N06CL(G)
- PCN Obsolescence/ EOLMultiple Devices 30/Jun/2011
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