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MLP1N06CL Технические параметры
ON Semiconductor MLP1N06CL technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | PMIC - Power Distribution Switches, Load Drivers | |
| Марка | ON Semiconductor | |
| Lifecycle Status | OBSOLETE (Last Updated: 1 week ago) | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Surface Mount | NO | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Turn Off Delay Time | 4 ns | |
| Operating Temperature | -50°C~150°C TJ | |
| Packaging | Tube | |
| Series | SMARTDISCRETES™ | |
| Published | 2009 | |
| JESD-609 Code | e0 | |
| Pbfree Code | no | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Lead (Sn80Pb20) | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Voltage - Rated DC | 62V | |
| Peak Reflow Temperature (Cel) | 240 | |
| Reach Compliance Code | not_compliant | |
| Current Rating | 1A | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Base Part Number | MLP1N06 | |
| Pin Count | 3 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Number of Outputs | 1Output | |
| Qualification Status | Not Qualified | |
| Output Type | N-Channel | |
| Interface | On/Off | |
| Element Configuration | Single | |
| Output Configuration | Low Side | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 40W | |
| Voltage - Supply (Vcc/Vdd) | Not Required | |
| Case Connection | DRAIN | |
| Input Type | Non-Inverting | |
| Switch Type | General Purpose | |
| Transistor Application | SWITCHING | |
| Rise Time | 4ns | |
| Fall Time (Typ) | 3 ns | |
| Continuous Drain Current (ID) | 1A | |
| Ratio - Input:Output | 1:1 | |
| JEDEC-95 Code | TO-220AB | |
| Gate to Source Voltage (Vgs) | 10V | |
| Voltage - Load | 59V Max | |
| Drain Current-Max (Abs) (ID) | 2.75A | |
| Drain to Source Breakdown Voltage | 59V | |
| Avalanche Energy Rating (Eas) | 80 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Rds On (Typ) | 590m Ω | |
| Drain to Source Resistance | 750mOhm | |
| RoHS Status | Non-RoHS Compliant | |
| Lead Free | Contains Lead |
MLP1N06CL Документы
- PCN Obsolescence/ EOLMultiple Devices 03/Jan/2008
- DatasheetsMLP1N06CL(G)
- ReachStatementON-Semiconductor-company-79.pdf
Индекс :
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