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MMBD352WT1G Технические параметры

ON Semiconductor  MMBD352WT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 15 Weeks
Package / Case SC-70, SOT-323
Surface Mount YES
Number of Pins 3Pins
Diode Element Material SILICON
Number of Elements 2 Elements
Power Dissipation (Max) 200mW
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.10.00.60
Свойство продукта Значение свойства
Voltage - Rated DC 7V
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 80mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MMBD352
Pin Count 3
Element Configuration Dual
Diode Type Schottky - 1 Pair Series Connection
Power Dissipation 300mW
Forward Current 10mA
Halogen Free Halogen Free
Forward Voltage 600mV
Peak Reverse Current 10μA
Max Repetitive Reverse Voltage (Vrrm) 7V
Capacitance @ Vr, F 1pF @ 0V 1MHz
Frequency Band ULTRA HIGH FREQUENCY
Diode Capacitance-Max 1pF
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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MMBD352WT1G Документы

MMBD352WT1G brand manufacturers: ON Semiconductor, Anli stock, MMBD352WT1G reference price.ON Semiconductor. MMBD352WT1G parameters, MMBD352WT1G Datasheet PDF and pin diagram description download.You can use the MMBD352WT1G Diodes - RF, DSP Datesheet PDF, find MMBD352WT1G pin diagram and circuit diagram and usage method of function,MMBD352WT1G electronics tutorials.You can download from the Anli.