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MMBD353LT1G Технические параметры

ON Semiconductor  MMBD353LT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Factory Lead Time 4 Weeks
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3Pins
Diode Element Material SILICON
Number of Elements 2 Elements
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.10.00.60
Capacitance 1pF
Voltage - Rated DC 7V
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 260
Current Rating 80mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MMBD353
Pin Count 3
Element Configuration Dual
Diode Type Schottky - 1 Pair Series Connection
Power Dissipation 225mW
Forward Current 10mA
Halogen Free Halogen Free
Forward Voltage 600mV
Reverse Recovery Time 5 ns
Peak Reverse Current 10μA
Max Repetitive Reverse Voltage (Vrrm) 7V
Capacitance @ Vr, F 1pF @ 0V 1MHz
Reverse Voltage 7V
Max Forward Surge Current (Ifsm) 600mA
Frequency Band ULTRA HIGH FREQUENCY
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

MMBD353LT1G Документы

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