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ON Semiconductor MMBD770T1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Свойство продукта | Значение свойства | |
---|---|---|
Классификация | Diodes - RF | |
Марка | ON Semiconductor | |
Lifecycle Status | ACTIVE (Last Updated: 2 days ago) | |
Factory Lead Time | 2 Weeks | |
Package / Case | SC-70, SOT-323 | |
Surface Mount | YES | |
Number of Pins | 3Pins | |
Diode Element Material | SILICON | |
Number of Elements | 1 Element | |
Operating Temperature | -55°C~125°C TJ | |
Packaging | Tape & Reel (TR) | |
Published | 2006 | |
JESD-609 Code | e3 | |
Pbfree Code | yes | |
Part Status | Active | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 3Terminations | |
ECCN Code | EAR99 | |
Terminal Finish | Tin (Sn) | |
Additional Feature | LOW REVERSE LEAKAGE | |
HTS Code | 8541.10.00.60 | |
Voltage - Rated DC | 70V | |
Terminal Position | DUAL | |
Terminal Form | GULL WING | |
Peak Reflow Temperature (Cel) | 260 | |
Current Rating | 1A | |
Time@Peak Reflow Temperature-Max (s) | 40 |
Свойство продукта | Значение свойства | |
---|---|---|
Base Part Number | MMBD770 | |
Pin Count | 3 | |
Polarity | Standard | |
Max Current Rating | 200mA | |
Element Configuration | Single | |
Diode Type | Schottky - Single | |
Power Dissipation | 120mW | |
Output Current | 200mA | |
Forward Current | 200mA | |
Max Reverse Leakage Current | 200nA | |
Max Surge Current | 1A | |
Forward Voltage | 1V | |
Peak Reverse Current | 200nA | |
Max Repetitive Reverse Voltage (Vrrm) | 70V | |
Capacitance @ Vr, F | 1pF @ 20V 1MHz | |
Peak Non-Repetitive Surge Current | 1A | |
Max Forward Surge Current (Ifsm) | 1A | |
Reverse Voltage (DC) | 70V | |
Frequency Band | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | |
Diode Capacitance-Max | 1pF | |
Height | 850μm | |
Length | 2.1mm | |
Width | 1.24mm | |
Radiation Hardening | No | |
RoHS Status | ROHS3 Compliant | |
Lead Free | Lead Free |