Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
MMBF4393LT1G Технические параметры
ON Semiconductor MMBF4393LT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - JFETs | |
| Марка | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 21 hours ago) | |
| Factory Lead Time | 8 Weeks | |
| Contact Plating | Tin | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Surface Mount | YES | |
| Number of Pins | 3Pins | |
| Weight | 1.437803g | |
| Transistor Element Material | SILICON | |
| Breakdown Voltage / V | -30V | |
| Number of Elements | 1 Element | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2000 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Resistance | 100Ohm | |
| HTS Code | 8541.21.00.95 | |
| Voltage - Rated DC | 30V | |
| Max Power Dissipation | 225mW | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Peak Reflow Temperature (Cel) | 260 | |
| Current Rating | 50mA | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Base Part Number | MBF4393 | |
| Pin Count | 3 | |
| Element Configuration | Single | |
| Operating Mode | DEPLETION MODE | |
| Power Dissipation | 225mW | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Halogen Free | Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | 14pF @ 15V | |
| Continuous Drain Current (ID) | 1μA | |
| Gate to Source Voltage (Vgs) | 30V | |
| Drain to Source Breakdown Voltage | 30V | |
| FET Technology | JUNCTION | |
| Drain to Source Resistance | 100Ohm | |
| Current - Drain (Idss) @ Vds (Vgs=0) | 5mA @ 15V | |
| Voltage - Cutoff (VGS off) @ Id | 500mV @ 10nA | |
| Resistance - RDS(On) | 100Ohm | |
| Height | 1.016mm | |
| Length | 3.0226mm | |
| Width | 1.397mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ