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MMBFJ110 Технические параметры
ON Semiconductor MMBFJ110 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - JFETs | |
| Марка | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 10 hours ago) | |
| Factory Lead Time | 21 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Number of Pins | 3Pins | |
| Weight | 30mg | |
| Transistor Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2008 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Resistance | 18Ohm | |
| Terminal Finish | Tin (Sn) | |
| HTS Code | 8541.21.00.95 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Max Power Dissipation | 460mW | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Base Part Number | MBFJ110 | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 460mW | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Drain to Source Voltage (Vdss) | 25V | |
| Continuous Drain Current (ID) | 10mA | |
| Gate to Source Voltage (Vgs) | -25V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Drain to Source Resistance | 18Ohm | |
| Current - Drain (Idss) @ Vds (Vgs=0) | 10mA @ 15V | |
| Voltage - Cutoff (VGS off) @ Id | 4V @ 10nA | |
| Resistance - RDS(On) | 18Ohm | |
| Height | 940μm | |
| Length | 2.92mm | |
| Width | 1.4mm | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
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