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MMBFJ112 Технические параметры

ON Semiconductor  MMBFJ112 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - JFETs
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 11 hours ago)
Factory Lead Time 42 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Weight 30mg
Transistor Element Material SILICON
Breakdown Voltage / V -35V
Number of Elements 1 Element
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Voltage - Rated DC 35V
Max Power Dissipation 350mW
Terminal Position DUAL
Terminal Form GULL WING
Свойство продукта Значение свойства
Current Rating 5mA
Base Part Number MBFJ112
Number of Channels 1Channel
Element Configuration Single
Operating Mode DEPLETION MODE
Power Dissipation 350mW
FET Type N-Channel
Transistor Application SWITCHING
Drain to Source Voltage (Vdss) 35V
Continuous Drain Current (ID) 5mA
Gate to Source Voltage (Vgs) -35V
FET Technology JUNCTION
Max Junction Temperature (Tj) 150°C
Drain to Source Resistance 50Ohm
Feedback Cap-Max (Crss) 5 pF
Current - Drain (Idss) @ Vds (Vgs=0) 5mA @ 15V
Voltage - Cutoff (VGS off) @ Id 1V @ 1μA
Resistance - RDS(On) 50Ohm
Height 1.11mm
Length 2.92mm
Width 1.3mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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