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MMBFJ309LT1G Технические параметры
ON Semiconductor MMBFJ309LT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - RF | |
| Марка | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) | |
| Factory Lead Time | 8 Weeks | |
| Contact Plating | Tin | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Surface Mount | YES | |
| Number of Pins | 3Pins | |
| Weight | 1.437803g | |
| Breakdown Voltage / V | -25V | |
| Number of Elements | 1 Element | |
| Usage Level | Military grade | |
| Packaging | Tape & Reel (TR) | |
| Published | 2006 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| Voltage - Rated DC | -25V | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Peak Reflow Temperature (Cel) | 260 | |
| Current Rating | 30mA | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Base Part Number | MMBFJ309 | |
| Pin Count | 3 | |
| Element Configuration | Single | |
| Operating Mode | DEPLETION MODE | |
| Power Dissipation | 225mW | |
| Transistor Application | AMPLIFIER | |
| Halogen Free | Halogen Free | |
| Drain to Source Voltage (Vdss) | 25V | |
| Transistor Type | N-Channel JFET | |
| Continuous Drain Current (ID) | 10mA | |
| Gate to Source Voltage (Vgs) | 25V | |
| Input Capacitance | 5pF | |
| FET Technology | JUNCTION | |
| Highest Frequency Band | ULTRA HIGH FREQUENCY B | |
| Height | 1.016mm | |
| Length | 3.0226mm | |
| Width | 1.397mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
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