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MMBT2222ALT3G Технические параметры

ON Semiconductor  MMBT2222ALT3G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 10 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Supplier Device Package SOT-23-3 (TO-236)
Collector-Emitter Breakdown Voltage 40V
Collector-Emitter Saturation Voltage 1V
Current-Collector (Ic) (Max) 600mA
Number of Elements 1 Element
hFEMin 35
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 40V
Max Power Dissipation 225mW
Current Rating 600mA
Frequency 300MHz
Base Part Number MMBT2222A
Свойство продукта Значение свойства
Polarity NPN
Element Configuration Single
Power Dissipation 300mW
Power - Max 300mW
Gain Bandwidth Product 300MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 40V
Max Frequency 100MHz
Max Breakdown Voltage 40V
Frequency - Transition 300MHz
Collector Base Voltage (VCBO) 75V
Emitter Base Voltage (VEBO) 6V
Height 1.01mm
Length 3.04mm
Width 1.4mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

MMBT2222ALT3G Документы

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