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MMBT2222AT Технические параметры

ON Semiconductor  MMBT2222AT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-89, SOT-490
Number of Pins 3Pins
Supplier Device Package SOT-523F
Weight 30mg
Collector-Emitter Breakdown Voltage 40V
Collector-Emitter Saturation Voltage 1V
Current-Collector (Ic) (Max) 600mA
Number of Elements 1 Element
hFEMin 75
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 250mW
Frequency 300MHz
Свойство продукта Значение свойства
Base Part Number MMBT2222
Polarity NPN
Element Configuration Single
Power Dissipation 250mW
Power - Max 250mW
Gain Bandwidth Product 300MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 1V
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 40V
Max Frequency 100MHz
Max Breakdown Voltage 40V
Frequency - Transition 300MHz
Collector Base Voltage (VCBO) 75V
Emitter Base Voltage (VEBO) 6V
Height 780μm
Length 1.7mm
Width 980μm
RoHS Status ROHS3 Compliant
Lead Free Lead Free

MMBT2222AT Документы

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