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MMBT2907 Технические параметры
ON Semiconductor MMBT2907 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ON Semiconductor | |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 day ago) | |
| Factory Lead Time | 7 Weeks | |
| Contact Plating | Tin | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Number of Pins | 3Pins | |
| Supplier Device Package | SOT-23-3 | |
| Weight | 30mg | |
| Collector-Emitter Breakdown Voltage | 40V | |
| Current-Collector (Ic) (Max) | 800mA | |
| Number of Elements | 1 Element | |
| hFEMin | 100 | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 1997 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Termination | SMD/SMT | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| Voltage - Rated DC | -40V |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Max Power Dissipation | 350mW | |
| Current Rating | -800mA | |
| Base Part Number | MMBT2907 | |
| Polarity | PNP | |
| Element Configuration | Single | |
| Power Dissipation | 350mW | |
| Power - Max | 350mW | |
| Transistor Type | PNP | |
| Collector Emitter Voltage (VCEO) | 40V | |
| Max Collector Current | 800mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA 10V | |
| Current - Collector Cutoff (Max) | 20nA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA | |
| Voltage - Collector Emitter Breakdown (Max) | 40V | |
| Max Breakdown Voltage | 40V | |
| Collector Base Voltage (VCBO) | -60V | |
| Emitter Base Voltage (VEBO) | -5V | |
| Height | 6.35mm | |
| Length | 6.35mm | |
| Width | 6.35mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
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