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MMBT5089LT1G Технические параметры

ON Semiconductor  MMBT5089LT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 9 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3Pins
Weight 4.535924g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 25V
Number of Elements 1 Element
hFEMin 400
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1997
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Voltage - Rated DC 25V
Max Power Dissipation 225mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Current Rating 50mA
Frequency 50MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MMBT5089
Pin Count 3
Element Configuration Single
Power Dissipation 225mW
Power - Max 300mW
Gain Bandwidth Product 50MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 25V
Max Collector Current 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 400 @ 100μA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 1mA, 10mA
Transition Frequency 50MHz
Max Breakdown Voltage 25V
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 4.5V
Height 1.11mm
Length 3.04mm
Width 2.64mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

MMBT5089LT1G Документы

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