Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
MMBT5551LT1G Технические параметры
ON Semiconductor MMBT5551LT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) | |
| Factory Lead Time | 4 Weeks | |
| Contact Plating | Tin | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Surface Mount | YES | |
| Number of Pins | 3Pins | |
| Weight | 4.535924g | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 160V | |
| Number of Elements | 1 Element | |
| hFEMin | 80 | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2006 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Voltage - Rated DC | 160V | |
| Max Power Dissipation | 225mW | |
| Terminal Position | DUAL |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Form | GULL WING | |
| Current Rating | 600mA | |
| Base Part Number | MMBT5551 | |
| Pin Count | 3 | |
| Element Configuration | Single | |
| Power Dissipation | 225mW | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 160V | |
| Max Collector Current | 600mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA 5V | |
| Current - Collector Cutoff (Max) | 100nA | |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA | |
| Max Breakdown Voltage | 160V | |
| Collector Base Voltage (VCBO) | 180V | |
| Emitter Base Voltage (VEBO) | 6V | |
| Max Junction Temperature (Tj) | 150°C | |
| VCEsat-Max | 0.2 V | |
| Height | 1.11mm | |
| Length | 2.9mm | |
| Width | 1.3mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ