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MMBT5551M3T5G Технические параметры
ON Semiconductor MMBT5551M3T5G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) | |
| Factory Lead Time | 2 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-723 | |
| Surface Mount | YES | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 160V | |
| Number of Elements | 1 Element | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2009 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Max Power Dissipation | 640mW |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Base Part Number | MMBT5551 | |
| Pin Count | 3 | |
| Element Configuration | Single | |
| Power Dissipation | 640mW | |
| Power - Max | 265mW | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 160V | |
| Max Collector Current | 60mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA 5V | |
| Current - Collector Cutoff (Max) | 50nA | |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA | |
| Max Breakdown Voltage | 160V | |
| Collector Base Voltage (VCBO) | 180V | |
| Emitter Base Voltage (VEBO) | 6V | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
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