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MMBTA42LT1G Технические параметры

ON Semiconductor  MMBTA42LT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 16 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3Pins
Weight 4.535924g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 300V
Number of Elements 1 Element
hFEMin 25
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1998
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Voltage - Rated DC 300V
Max Power Dissipation 225mW
Terminal Position DUAL
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 260
Current Rating 500mA
Frequency 50MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MMBTA42
Pin Count 3
Element Configuration Single
Power Dissipation 300mW
Gain Bandwidth Product 50MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 30mA 10V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA
Transition Frequency 50MHz
Max Breakdown Voltage 300V
Collector Base Voltage (VCBO) 300V
Emitter Base Voltage (VEBO) 6V
Height 1.016mm
Length 3.0226mm
Width 1.397mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

MMBTA42LT1G Документы

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