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MMBTA55LT1G Технические параметры

ON Semiconductor  MMBTA55LT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 4 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 60V
Number of Elements 1 Element
hFEMin 100
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Type General Purpose
Voltage - Rated DC -60V
Max Power Dissipation 225mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Current Rating -500mA
Frequency 50MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MMBTA55
Pin Count 3
Element Configuration Single
Power Dissipation 300mW
Power - Max 225mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 50MHz
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Transition Frequency 50MHz
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 4V
Height 1.01mm
Length 3.04mm
Width 1.4mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

MMBTA55LT1G Документы

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