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MMBTA56LT1G-HFE Технические параметры

ON Semiconductor  MMBTA56LT1G-HFE technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Current-Collector (Ic) (Max) 500mA
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Part Status Active
Свойство продукта Значение свойства
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 225mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 80V
Frequency - Transition 50MHz
RoHS Status ROHS3 Compliant
Просмотр сходства

MMBTA56LT1G-HFE Документы

MMBTA56LT1G-HFE brand manufacturers: ON Semiconductor, Anli stock, MMBTA56LT1G-HFE reference price.ON Semiconductor. MMBTA56LT1G-HFE parameters, MMBTA56LT1G-HFE Datasheet PDF and pin diagram description download.You can use the MMBTA56LT1G-HFE Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find MMBTA56LT1G-HFE pin diagram and circuit diagram and usage method of function,MMBTA56LT1G-HFE electronics tutorials.You can download from the Anli.