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MMBTH10 Технические параметры

ON Semiconductor  MMBTH10 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка ON Semiconductor
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 day ago)
Factory Lead Time 14 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Supplier Device Package SOT-23-3 (TO-236)
Weight 30mg
Collector-Emitter Breakdown Voltage 25V
Current-Collector (Ic) (Max) 50mA
Number of Elements 1 Element
hFEMin 60
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 25V
Max Power Dissipation 225mW
Current Rating 50mA
Свойство продукта Значение свойства
Frequency 650MHz
Base Part Number MMBTH10
Polarity NPN
Element Configuration Single
Power Dissipation 225mW
Power - Max 225mW
Gain Bandwidth Product 650MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 25V
Max Collector Current 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 4mA 10V
Voltage - Collector Emitter Breakdown (Max) 25V
Max Frequency 650MHz
Max Breakdown Voltage 25V
Frequency - Transition 650MHz
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 3V
Continuous Collector Current 50mA
Height 930μm
Length 2.92mm
Width 1.3mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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MMBTH10 Документы

MMBTH10 brand manufacturers: ON Semiconductor, Anli stock, MMBTH10 reference price.ON Semiconductor. MMBTH10 parameters, MMBTH10 Datasheet PDF and pin diagram description download.You can use the MMBTH10 Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find MMBTH10 pin diagram and circuit diagram and usage method of function,MMBTH10 electronics tutorials.You can download from the Anli.