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MMBTH10LT1 Технические параметры

ON Semiconductor  MMBTH10LT1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка ON Semiconductor
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Package / Case SOT-23-3
Surface Mount YES
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 25V
Number of Elements 1 Element
hFEMin 60
Packaging Cut Tape (CT)
Published 2003
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 25V
Max Power Dissipation 225mW
Terminal Position DUAL
Свойство продукта Значение свойства
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating 4mA
Frequency 650MHz
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
Qualification Status Not Qualified
Polarity NPN
Element Configuration Single
Power Dissipation 300mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 650MHz
Collector Emitter Voltage (VCEO) 25V
Transition Frequency 650MHz
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 3V
Collector Current-Max (IC) 0.025A
DC Current Gain-Min (hFE) 60
Collector-Base Capacitance-Max 0.7pF
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
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MMBTH10LT1 Документы

MMBTH10LT1 brand manufacturers: ON Semiconductor, Anli stock, MMBTH10LT1 reference price.ON Semiconductor. MMBTH10LT1 parameters, MMBTH10LT1 Datasheet PDF and pin diagram description download.You can use the MMBTH10LT1 Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find MMBTH10LT1 pin diagram and circuit diagram and usage method of function,MMBTH10LT1 electronics tutorials.You can download from the Anli.