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MMBTH10RG Технические параметры

ON Semiconductor  MMBTH10RG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка ON Semiconductor
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Factory Lead Time 7 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Weight 30mg
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 40V
Number of Elements 1 Element
hFEMin 50
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 40V
Max Power Dissipation 225mW
Свойство продукта Значение свойства
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 50mA
Frequency 450MHz
Base Part Number MMBTH10
Element Configuration Single
Output Power 225mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 450MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 1mA 6V
Transition Frequency 450MHz
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 4V
Continuous Collector Current 45mA
Collector-Base Capacitance-Max 0.6pF
Height 930μm
Length 2.92mm
Width 1.3mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

MMBTH10RG Документы

MMBTH10RG brand manufacturers: ON Semiconductor, Anli stock, MMBTH10RG reference price.ON Semiconductor. MMBTH10RG parameters, MMBTH10RG Datasheet PDF and pin diagram description download.You can use the MMBTH10RG Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find MMBTH10RG pin diagram and circuit diagram and usage method of function,MMBTH10RG electronics tutorials.You can download from the Anli.